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TW-PN-C type PN junction physical property testing instrument

Product ID:SYJrlgdc007

Price: Please inquire PDF Format
Supply Ability:50 SETS/MON
Port:SHENZHEN
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  • Product Introduction
  • Consulting
  • Model NumberTW-PN-C type
    Brand NameSHANGHAITIANWEI
    Payment TermsTT,PAYPAL
    TW-PN-C type PN junction physical property testing instrument
    Introduction:
    The physical properties of PN junction is one of the important contents in the teaching of general physics, semiconductor physics and electronics. Boltzmann constant is a basic constant in physics. In the physical experiment teaching materials, there have been measurements of the basic physical constants, such as electronic charge, charge mass ratio, Planck constant, but there is a lack of experiments on the measurement of Boltzmann constant and the study of Boltzmann distribution law. The PN junction physical property tester produced by our company can be used to measure the physical properties of PN junction and Boltzmann constant, and can learn new methods of weak current measurement.
    The TW-PN-C type PN junction physical property tester is based on the TW-PN-2 type and is equipped with a dry well variable temperature thermostat to measure the relationship between PN junction voltage and thermodynamic temperature, obtain the sensitivity of the sensor, and approximately obtain the band gap width of silicon material at 0K. The instrument has rich physical content, clear concept and high accuracy of measurement results, which is very suitable for general physics experiment teaching in colleges and universities.
    Experiment content:
    1. Measure the relationship between PN junction diffusion current and junction voltage, and measure Boltzmann constant more accurately.
    2. Learn to use the operational amplifier to form a current voltage conversion circuit to measure the weak current.
    3. Measure the relationship between PN junction voltage and temperature, and calculate the sensitivity of junction voltage changing with temperature.
    4. Approximately obtain the band gap of semiconductor (silicon) material at 0K.
    Technical parameters:
    1. One set of 0-1.5V adjustable DC power supply;
    One set of 1mA-3mA adjustable DC power supply.
    2. LCD measurement display module
    LCD resolution: 128 ×  64 pixels
    Two groups of voltage digital display indication range: 0-4095mV, resolution: 1mV
    Range: 0-40.95V, resolution: 0.01V
    3. Temperature control range of thermostatic control device: room temperature - 80 Resolution: 0.1
  • Introduction:
    The physical properties of PN junction is one of the important contents in the teaching of general physics, semiconductor physics and electronics. Boltzmann constant is a basic constant in physics. In the physical experiment teaching materials, there have been measurements of the basic physical constants, such as electronic charge, charge mass ratio, Planck constant, but there is a lack of experiments on the measurement of Boltzmann constant and the study of Boltzmann distribution law. The PN junction physical property tester produced by our company can be used to measure the physical properties of PN junction and Boltzmann constant, and can learn new methods of weak current measurement.
    The TW-PN-C type PN junction physical property tester is based on the TW-PN-2 type and is equipped with a dry well variable temperature thermostat to measure the relationship between PN junction voltage and thermodynamic temperature, obtain the sensitivity of the sensor, and approximately obtain the band gap width of silicon material at 0K. The instrument has rich physical content, clear concept and high accuracy of measurement results, which is very suitable for general physics experiment teaching in colleges and universities.
     
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