RTP-DTS-8 Fully Automatic Double Chamber Rapid Annealing Furnace Introduction: The RTP-DTS-8 fully automatic dual chamber rapid annealing furnace uses halogen infrared lamps as a heat source and a very fast heating rate to heat wafers or materials to 300 ℃ -1250 ℃ in a short period of time, thereby eliminating some internal defects of wafers or raw materials and improving product characteristics. working principle: The rapid annealing furnace adopts a microcomputer automatic control system, which uses PID closed-loop temperature control to achieve temperature control accuracy and uniformity. It can also be equipped with a vacuum chamber and multiple gas channels according to customer processing requirements. Industry applications: Rapid Heat Treatment Process (RTP) Rapid Annealing (RTA) Rapid Thermal Oxidation (RTO) Compound alloys (gallium arsenide, nitrides, etc.) Polycrystalline silicon annealing Ohmic contact rapid alloy Technical parameters: Product size: 6-8 inches Temperature range: Room temperature~1250 ℃ Temperature control repeatability: ± 1 ℃ Temperature uniformity: ± 3 ℃ ≤ 600 ℃ ± 0.5%>600 ℃ Heating rate: ≤ 30 ℃/s (carrier) Number of cavities: Dual cavities
Introduction: The RTP-DTS-8 fully automatic dual chamber rapid annealing furnace uses halogen infrared lamps as a heat source and a very fast heating rate to heat wafers or materials to 300 ℃ -1250 ℃ in a short period of time, thereby eliminating some internal defects of wafers or raw materials and improving product characteristics. working principle: The rapid annealing furnace adopts a microcomputer automatic control system, which uses PID closed-loop temperature control to achieve temperature control accuracy and uniformity. It can also be equipped with a vacuum chamber and multiple gas channels according to customer processing requirements.
