HPPD-M-B HgCdTe infrared detector

Product ID:GGFhwrx0028

Price: Please inquire PDF Format
Supply Ability:50 SETS/MON
Port:SHENZHEN
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  • Product Introduction
  • Consulting
  • Model NumberHPPD-M-B
    Brand NameSHANGHAIXINHONG
    Payment TermsTT,PAYPAL
    HPPD-M-B HgCdTe infrared detector
    Introduction:
    MCT infrared detector is a highly sensitive photoelectric detector made of HgCdTe (HgCdTe, MCT) material, which is sensitive to the light wave of 2~12um middle infrared spectrum.
    The detector can be DC or AC coupled output. The detector is highly integrated with the preamplifier circuit and the semiconductor thermoelectric cooler (TEC) controller. The temperature of the detector element is controlled at minus 40 degrees Celsius through the feedback circuit, thus reducing the impact of thermal noise on the output signal. The detector shell is made of all-aluminum alloy material, which can shield the electromagnetic interference of the environment and also has good heat dissipation performance.
    characteristic:
    1. Semiconductor cooled HgCdTe infrared photodetector;
    2. It is sensitive to light waves in the middle infrared spectral band of 2~12 um;
    3. Internal integrated low noise preamplifier+TEC control unit;
    4. TEC thermoelectric cooling is stable at - 80 - 40 , greatly reducing thermal noise;
    5. High performance-price ratio, providing high-speed frequency bandwidth customization service.
    Technical parameters:
    Detector material: mercury cadmium telluride (MCT), HgCdTe
    Response wavelength range: 2~12 um
    Peak response wavelength λ p) : 3um, 4um, 5um, 6um, 7um, 8um, 9um, 10um, 11um, 12um (optional)
    Peak response: Typ 10 ~ 100 V/W
    Photosensitive area: Typ 1mm2
    Signal bandwidth: DC~2MHz
    Output voltage: ± 5 V (Hi-Z load); ± 2.5V (50 Ω load)
    Trans-resistance gain: 15000V/A (Hi-Z load); 7500V/A (50 Ω load)
    Power supply voltage: ± 5VDC (detector module); 220VAC (power module)
    Signal output interface: SMA
    Operating temperature range: 10 to 50
    Storage temperature range: - 25 to 70
    Size: 60mm * 60mm * 64 mm
    Weight: 0.2 kg
    HPPD-M-B HgCdTe infrared detector
    Introduction:
    MCT infrared detector is a highly sensitive photoelectric detector made of HgCdTe (HgCdTe, MCT) material, which is sensitive to the light wave of 2~12um middle infrared spectrum.
    The detector can be DC or AC coupled output. The detector is highly integrated with the preamplifier circuit and the semiconductor thermoelectric cooler (TEC) controller. The temperature of the detector element is controlled at minus 40 degrees Celsius through the feedback circuit, thus reducing the impact of thermal noise on the output signal. The detector shell is made of all-aluminum alloy material, which can shield the electromagnetic interference of the environment and also has good heat dissipation performance.
    characteristic:
    1. Semiconductor cooled HgCdTe infrared photodetector;
    2. It is sensitive to light waves in the middle infrared spectral band of 2~12 um;
    3. Internal integrated low noise preamplifier+TEC control unit;
    4. TEC thermoelectric cooling is stable at - 80 - 40 , greatly reducing thermal noise;
    5. High performance-price ratio, providing high-speed frequency bandwidth customization service.
    Technical parameters:
    Detector material: mercury cadmium telluride (MCT), HgCdTe
    Response wavelength range: 2~12 um
    Peak response wavelength λ p) : 3um, 4um, 5um, 6um, 7um, 8um, 9um, 10um, 11um, 12um (optional)
    Peak response: Typ 10 ~ 100 V/W
    Photosensitive area: Typ 1mm2
    Signal bandwidth: DC~2MHz
    Output voltage: ± 5 V (Hi-Z load); ± 2.5V (50 Ω load)
    Trans-resistance gain: 15000V/A (Hi-Z load); 7500V/A (50 Ω load)
    Power supply voltage: ± 5VDC (detector module); 220VAC (power module)
    Signal output interface: SMA
    Operating temperature range: 10 to 50
    Storage temperature range: - 25 to 70
    Size: 60mm * 60mm * 64 mm
    Weight: 0.2 kg
  • Introduction:
    MCT infrared detector is a highly sensitive photoelectric detector made of HgCdTe (HgCdTe, MCT) material, which is sensitive to the light wave of 2~12um middle infrared spectrum.
    The detector can be DC or AC coupled output. The detector is highly integrated with the preamplifier circuit and the semiconductor thermoelectric cooler (TEC) controller. The temperature of the detector element is controlled at minus 40 degrees Celsius through the feedback circuit, thus reducing the impact of thermal noise on the output signal. The detector shell is made of all-aluminum alloy material, which can shield the electromagnetic interference of the environment and also has good heat dissipation performance.
     
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